System Maintenance:
There may be intermittent impact on performance while updates are in progress. We apologize for the inconvenience.
By Topic

Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bau, S. ; Fraunhofer-Inst. fur Solare Energiesysteme, Freiburg, Germany ; Huljic, D.M. ; Isenberg, J. ; Rentsch, J.

Lock-in thermography has been applied for shunt-analysis on epitaxial silicon thin-film solar cells. The solar cell material was made by epitaxial deposition of the base layer on highly doped monocrystalline (Czochralski) and multicrystalline silicon substrates in an APCVD-system. Solar cells were prepared in a laboratory-type and an industrial-type process. Characterization of the solar cells by infrared lock-in thermography and microscopy revealed a clear correlation between shunts and epitaxial defects in case of the lab-type solar cells. Furthermore an increased concentration of shunts located under the emitter grid lines of the industrial-type solar cells compared to the lab-type solar cells was observed. The analysis by thermography thus gave insight into the quality of the epitaxial layers and into problems concerning a transfer of the solar cell process from laboratory to industrial scale manufacturing.

Published in:

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

Date of Conference:

19-24 May 2002