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Hot Wire Cell method has been developed in order to grow a-Si and μc-Si thin films with relatively high growth rates of 0.4-3.0 nm/s at a low substrate temperature of about 200°C. It was found that the peak at 2100 cm-1 which originates from Si-H, bonding in the infrared absorption spectra could be dramatically reduced at a low deposition pressure of 10 mTorr. Besides, it was found by SIMS analysis that the concentrations of O and C atoms could be reduced to the order of 1018 cm-3 for a-Si and 1020 cm-1 for μc-Si, respectively, at low deposition pressures of 3-10 mTorr. The conversion efficiency of 7.5% and 3.3% were achieved for superstrate-type a-Si and μc-Si solar cells with the deposition rate of 0.4-0.5 nm/s under AM1.5 insulation, respectively.