Thickness evolution of the microstructural and optical properties of Si:H films in the amorphous-to-microcrystalline phase transition region

The ability to characterize the phase of the intrinsic (i) layers incorporated into amorphous silicon [a-Si:H] and microcrystalline silicon [/spl mu/c-Si:H] thin film solar cells is critically important for cell optimization. In this research, a new method has been developed to extract the thickness evolution of the /spl mu/c-Si:H volume fraction in mixed phase amorphous + microcrystalline silicon [(a+/spl mu/c)-Si:H] i-layers. This method is based on real time spectroscopic ellipsometry measurements performed during plasma-enhanced chemical vapor deposition of the films. In the analysis, the thickness at which crystallites first nucleate from the a-Si:H phase can be estimated, as well as the nucleation density and microcrystallite cone angle. The results show very good correlations with structural and electronic device measurements.