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Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells

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3 Author(s)
Baosheng Sang ; Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA ; Shafarman, W.N. ; Birkmire, R.W.

Chemical bath deposition of ZnS from solutions of ZnSO4, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se2 solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but Voc, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm2) with the ZnS buffer was 13.9% efficient (Voc: 618 mV, Jsc: 32.4 mA/cm2 FF: 0.693).

Published in:

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

Date of Conference:

19-24 May 2002

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