Cart (Loading....) | Create Account
Close category search window

Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se2 thin film solar cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Baosheng Sang ; Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA ; Shafarman, W.N. ; Birkmire, R.W.

Chemical bath deposition of ZnS from solutions of ZnSO4, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se2 solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but Voc, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm2) with the ZnS buffer was 13.9% efficient (Voc: 618 mV, Jsc: 32.4 mA/cm2 FF: 0.693).

Published in:

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

Date of Conference:

19-24 May 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.