Investigation of chemical-bath-deposited ZnS buffer layers for Cu(InGa)Se/sub 2/ thin film solar cells

Chemical bath deposition of ZnS from solutions of ZnSO/sub 4/, thiourea and ammonia was carried out. Structural and optical properties of the ZnS films were studied. Cu(InGa)Se/sub 2/ solar cells fabricated with the ZnS buffer had higher quantum efficiency at short wavelengths but V/sub oc/, and FF were a little lower than those with CdS buffer. The best cell (total area: 0.47 cm/sup 2/) with the ZnS buffer was 13.9% efficient (V/sub oc/: 618 mV, J/sub sc/: 32.4 mA/cm/sup 2/ FF: 0.693).