By Topic

A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Jae-Yoon Sim ; Memory Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea ; Hongil Yoon ; Ki-Chul Chun ; Hyun-Seok Lee
more authors

To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μm technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5°C.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:38 ,  Issue: 4 )