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A 1.8-V 128-Mb mobile DRAM with double boosting pump, hybrid current sense amplifier, and dual-referenced adjustment scheme for temperature sensor

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9 Author(s)
Jae-Yoon Sim ; Memory Div., Samsung Electron. Co. Ltd., Kyunggi-Do, South Korea ; Hongil Yoon ; Ki-Chul Chun ; Hyun-Seok Lee
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To verify three important circuit schemes suitable for DRAMs in mobile applications, a 1.8-V 128-Mb SDRAM was implemented with a 0.15-μm technology. To achieve an ideal 33% efficiency, the double boosting pump uses two capacitor's series connection at pumping phase, while they are precharged in parallel. The hybrid folded current sense amplifier together with a novel replica inverter connection improved power and speed performances. Also, a dual-referenced adjustment scheme for a temperature sensor was proposed to allow a very high accuracy in tuning. Without loss in productivity, the implemented dual-referenced searching technique achieved tuning error of less than ±2.5°C.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:38 ,  Issue: 4 )