Cart (Loading....) | Create Account
Close category search window

Modeling of low-frequency noise in metal-oxide-semiconductor field-effect transistor with electron trapping-detrapping at oxide-silicon interface

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A low-frequency (flicker) noise model based on the physics of trapping and detrapping of electrons at the silicon-oxide interface for MOS transistors in the linear regions is presented. Using the experimental results that the trapping and detrapping time constants are different for the same gate bias and temperature, both (VG -Vt)/Cox and C ox-2 dependencies were obtained in the newly proposed model without introducing the mobility fluctuation term. Gate and temperature dependencies of the frequency index were also incorporated into the model. Results show that the proposed model yields a better correlation to the experiments than others, but there are still several experimental observations unexplained. Suggestions for further refinement of the model are also given

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 8 )

Date of Publication:

Aug 1991

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.