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Fabrication and characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers

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6 Author(s)
Saito, S. ; Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan ; Kimura, T. ; Tanabe, T. ; Suto, Ken
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We have fabricated GaP-AlGaP tapered waveguide semiconductor Raman amplifiers, and analyzed the effect of tapering in pulse-pumped high-gain operation. The finesse measurement and 80-ps pulse pumped Raman amplification experiment were performed. Although the tapering has caused additional optical loss, the highest gain of 23 dB has been obtained for a tapered waveguide with input facet of 6.0 μm2 and back facet of 2.9 μm2 at averaged input power of 170 mW (peak power 26 W). It is shown that the optical loss of the pump light is more severe than the linear optical loss of the signal light when the gain is higher than 20 dB.

Published in:

Lightwave Technology, Journal of  (Volume:21 ,  Issue: 1 )

Date of Publication:

Jan 2003

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