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Analysis of delta-doped and uniformly doped AlGaAs/GaAs HEMT's by ensemble Monte Carlo simulations

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3 Author(s)
Kim, K.W. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Tian, H. ; Littlejohn, M.A.

Transport properties and device performance of delta-doped and uniformly doped AlGaAs/GaAs high electron mobility transistors (HEMTs) with identical threshold voltages and gate capacitors are investigated using two-dimensional self-consistent ensemble Monte Carlo simulations. The model includes the effects of real-space transfer and carrier degeneracy, as well as the influence of DX centers and surface states. A one-to-one comparison of simulation results for the two devices demonstrates superior performance for the delta-doped HEMT and provides a physical basis for the observed improvements. In particular, the delta-doped HEMT maintains its superior device performance as gate bias is increased. Reasons for these improvements are reported

Published in:

Electron Devices, IEEE Transactions on  (Volume:38 ,  Issue: 8 )