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High efficiency long wavelength VCSEL on InP grown by MOCVD

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6 Author(s)

High efficiency continuous-wave operation of 1.53 μm vertical cavity surface emitting lasers (VCSELs) with buried tunnel junction grown by metal organic chemical vapour deposition (MOCVD) has been demonstrated. Devices show a high differential quantum efficiency of 46% and a singlemode power of 1 mW. Minimum threshold current and voltage are 0.45 mA and 1.3 V at room temperature, respectively for devices of 5 μm diameter.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 5 )