By Topic

Ballistic electron transport in semiconductor heterostructures and its analogies in electromagnetic propagation in general dielectrics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Henderson, Gregory N. ; Sch. of Electr. Eng., Georgia Inst. of Technol., Atlanta, GA, USA ; Gaylord, T.K. ; Glytsis, Elias N.

A comprehensive set of analogies between ballistic electron wave propagation in semiconductors (arbitrary kinetic energy and effective mass) and electromagnetic propagation in general dielectrics (arbitrary permittivity and permeability) is established. The expressions for electron wave propagation, reflection, and refraction are developed and shown to have the same functional form as in electromagnetics, if analogous definitions of electron wave phase and amplitude refractive indexes are used. The reflectivity characteristics such as total internal reflection (critical angle) and zero reflectivity (Brewster angle) are analyzed as a function of material parameters for both general dielectrics and semiconductor materials. The critical angle and Brewster angle results are then applied to electron wave propagation in Ga1-xAlxAs, where it is shown that all interfaces in this material will have both a critical angle and a Brewster angle due to differing effective masses across the interface

Published in:

Proceedings of the IEEE  (Volume:79 ,  Issue: 11 )