By Topic

Single crystal silicon four-terminal nano-wire shear stress gauge for nano mechanical sensors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
T. Toriyama ; New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan ; S. Sugiyama

P-type single crystal silicon four-terminal nanowire shear stress gauge (Si FSSG) was fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at Ns=9-1019 cm-3. This value was 54.8 % larger than the value obtained from p+ diffused piezoresistors, which are used in conventional mechanical sensors.

Published in:

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

Date of Conference:

19-23 Jan. 2003