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Single crystal silicon four-terminal nano-wire shear stress gauge for nano mechanical sensors

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2 Author(s)
Toriyama, Toshiyuki ; New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan ; Sugiyama, S.

P-type single crystal silicon four-terminal nanowire shear stress gauge (Si FSSG) was fabricated by electron-beam direct writing. The piezoresistance was investigated in order to demonstrate the usefulness of these sensing elements as mechanical sensors. The shear piezoresistance coefficient π44 was found to be 77.4×10-11 Pa-1 at Ns=9-1019 cm-3. This value was 54.8 % larger than the value obtained from p+ diffused piezoresistors, which are used in conventional mechanical sensors.

Published in:

Micro Electro Mechanical Systems, 2003. MEMS-03 Kyoto. IEEE The Sixteenth Annual International Conference on

Date of Conference:

19-23 Jan. 2003

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