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Extremely low threshold current buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

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6 Author(s)
J. W. Xiao ; Inst. of Semicond., Chinese Acad. of Sci., Beijing, China ; J. Y. Xu ; G. W. Yang ; J. M. Zhang
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A very low CW threshold current of 1.65 mA at room temperature was obtained for an uncoated buried-heterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 44.6% (0.53 mW/mA) and output power of more than 30 mW per facet were achieved in the same laser.

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Electronics Letters  (Volume:28 ,  Issue: 2 )