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Electromigration induced failure in SnAg3.8Cu0.7 solder joints for flip chip technology

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3 Author(s)
Y. -C. Hsu ; Dept. of Material Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; T. -L. Shao ; Chih Chen

Electromigration of SnAg3.8Cu0.7 solder was investigated in flip chip solder bump. An under-bump metallization (UBM) of Cr/Cr-Cu/Cu tri-layer was deposited on the chip side and electroless Cu/Ni/Au pad was deposited on the BT board side. Electromigration damage was observed under the current density of 2×104 A/cm2 at 100°C. Voids were found at cathode side and crack was observed at solder/thin film UBM interface after current stressing, and the bump failed after 168-hour stressing. Copper atoms were found to move in the direction of electron flow. Intermetallic compounds of Cu-Sn and Ni-Cu-Sn were also observed to spread into the solder bump due to current stressing.

Published in:

Electronic Materials and Packaging, 2002. Proceedings of the 4th International Symposium on

Date of Conference:

4-6 Dec. 2002