An ultra-low-power-consumption high-gain low-noise amplifier for wireless applications operating in the 2.45 GHz industrial-scientific-medical (ISM) band has been developed. Under low dc power bias of 1.0 V and 0.96 mA, the amplifier demonstrated the state-of-the-art performance with a gain of 30.1 dB, NF of 4.31 dB, input and output return loss of less than -14 dB and the corresponding -1 dB compression point of -19.47 dBm at 2.45 GHz, achieving a gain/Pdc figure of merit of 31.35 dB/mW and a gain/NF.Pdc ratio of 7.27/mW, which are the highest ever reported at S-band.
Published in:
Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on
Date of Conference: 17-19 Aug. 2002