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A 5.2 GHz, 1.7 dB NF low noise amplifier for wireless LAN based on 0.18 um CMOS technology

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2 Author(s)
Trung-Kien Nguyen ; Inf. & Commun. Univ., Daejon, South Korea ; Sang-Gug Lee

A high gain, low noise LNA is implemented using inter-stage series resonance technique. This paper reports the implication of the quality factor of the resonating inductor on the LNA performances such as voltage and current gain, noise figure, and power gain. Two versions LNAs with low and high resonating inductors are designed for 5.2 GHz applications based on 0.18 μm CMOS technology. Simulation results show power gain of 18.9 dB, NF of 1.7 dB, and OIP3 of 12.9 dBm from the high Q inductor version.

Published in:

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Date of Conference:

17-19 Aug. 2002

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