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42 GHz active frequency doubler in SiGe bipolar technology

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2 Author(s)
Hackl, S. ; Infineon Technol. AG, Munich, Germany ; Bock, J.

This work describes a monolithic integrated active frequency doubler for frequencies up to 42 GHz in a pre-production 0.4 μm SiGe bipolar technology. Gain is achieved at the input power of -12 dBm between 18 and 42 GHz with maximum of 8.6 dB at 30 GHz. The circuit may be used for future broadband wireless services like LMDS at 28 and 38 GHz or MVDS at 42 GHz.

Published in:

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Date of Conference:

17-19 Aug. 2002