Cart (Loading....) | Create Account
Close category search window

Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon [111] substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Vellas, N. ; Dept. Hyperfrequences et Semiconducteurs, Inst. d''Electronique et de Microelectronique du Nord, Villeneuve d''Ascq, France ; Gaquiere, C. ; Minko, A. ; Hoel, V.
more authors

The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 /spl times/ 50 /spl times/ 0.5 /spl mu/m/sup 2/ HEMT with a linear power gain of 16 dB. These results constitute the state of the art.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:13 ,  Issue: 3 )

Date of Publication:

March 2003

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.