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Millimeter-wave high-power 0.25-μm gate-length AlGaN/GaN HEMTs on SiC substrates

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8 Author(s)
Schwindt, R.S. ; Micro & Nanotechnology Lab., Univ. of Illinois, Urbana, IL, USA ; Kumar, V. ; Kuliev, A. ; Simin, G.
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Reports on the CW power performance at 20 and 30 GHz of 0.25 μm × 100 μm AlGaN/GaN high electron mobility transistors (HEMTs) grown by MOCVD on semi-insulating SiC substrates. The devices exhibited current density of 1300 mA/mm, peak dc extrinsic transconductance of 275 mS/mm, unity current gain cutoff (fT) of 65 GHz, and maximum frequency of oscillation (fmax) of 110 GHz. Saturated output power at 20 GHz was 6.4 W/mm with 16% power added efficiency (PAE), and output power at 1-dB compression at 30 GHz was 4.0 W/mm with 20% PAE. This is the highest power reported for 0.25-μm gate-length devices at 20 GHz, and the 30 GHz results represent the highest frequency power data published to date on GaN-based devices.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:13 ,  Issue: 3 )