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High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing

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4 Author(s)
Soo Young Yoon ; Philips Res. Labs., Redhill, UK ; N. Young ; P. J. van der Zaag ; D. McCulloch

High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) have been fabricated using metal-induced crystallization followed by laser annealing (L-MIC). Laser annealing after MIC was found to yield a major improvement to the electrical characteristics of poly-Si TFTs. At a laser fluence of 330 mJ/cm2, the field effect mobility increased from 71 to 239 cm2/Vs, and the minimum leakage current reduced from around 3.0×10/sup -12/ A/μm to 2.9×10/sup -13/ A/μm at a drain voltage of 5 V. In addition, the dependence of the TFT characteristics on the laser energy density was much weaker than that for conventional excimer laser annealed poly-Si TFTs.

Published in:

IEEE Electron Device Letters  (Volume:24 ,  Issue: 1 )