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Fully depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon

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5 Author(s)
Holland, S.E. ; Lawrence Berkeley Nat. Lab., CA, USA ; Groom, D.E. ; Palaio, N.P. ; Stover, R.J.
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Charge-coupled devices (CCDs) have been fabricated on high-resistivity, n-type silicon. The resistivity, on the order of 10 000 Ω·cm, allows for depletion depths of several hundred micrometers. Fully depleted, back-illuminated operation is achieved by the application of a bias voltage to an ohmic contact on the wafer back side consisting of a thin in situ doped polycrystalline silicon layer capped by indium tin oxide and silicon dioxide. This thin contact allows for a good short-wavelength response, while the relatively large depleted thickness results in a good near-infrared response.

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Electron Devices, IEEE Transactions on  (Volume:50 ,  Issue: 1 )