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The effect of technology scaling (0.5-0.09 μm) on single event upset (SEU) phenomena is investigated using full two-dimensional device simulation. The SEU reliability parameters, such as critical charge (Qcrit), feedback time (Tfd) and linear energy transfer (LET), are estimated. For Lg<0.18 μm, the source node collects a significant fraction of radiation-induced charge resulting in an increase of LET, despite the lower critical charge at the sensitive drain node. The effect of striking location on LET confirms this finding.