Referenced Items are not available for this document.
Spot defects in memory devices are caused by imperfections in the fabrication process of these devices. In order to analyze the faulty effect of spot defects on the memory behavior, simulations have been performed on an electrical model of the memory in which the defects are injected, causing opens, shorts, or bridges. In this paper, simulation is used to analyze the faulty behavior of embedded DRAM (eDRAM) devices produced by Infineon Technologies. The paper applies the new approach of fault primitives to perform this analysis. The analysis shows the existence of most traditional memory fault models and establishes new ones. The paper also investigates the concept of dynamic faulty behavior and establishes its importance for eDRAMs. Conditions to test the newly established fault models, together with a test, are also given.
Published in:
Computers, IEEE Transactions on
(Volume:52
,
Issue:
3
)
Date of Publication: March 2003
- Page(s):
- 293 - 309
- ISSN :
- 0018-9340
- INSPEC Accession Number:
- 7667451
- Digital Object Identifier :
- 10.1109/TC.2003.1183945
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 10 March 2003
- Issue Date :
- March 2003
- Sponsored by :
- IEEE Computer Society
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