By Topic

A pendulous oscillating gyroscopic accelerometer fabricated using deep-reactive ion etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

A silicon pendulous oscillating gyroscopic accelerometer (POGA) was fabricated using deep-reactive ion etching (DRIE) and silicon wafer bonding technologies. A POGA is the micromachining-compatible analog of the pendulous integrating gyroscopic accelerometer (PIGA), which is the basis of the most sensitive accelerometers demonstrated to date. Gyroscopic accelerometers rely on the principle of rebalancing an acceleration-sensing pendulous mass by means of an induced gyroscopic torque. The accelerometer is composed of three individual layers that are assembled into the final instrument. The top layer uses wafer bonding of an oxidized wafer to a handling wafer to create a silicon-on-oxide wafer pair, in which the oxide layer provides electrical isolation between the mechanical members and the handling layer. The middle layer is a two-gimbal torsionally-supported silicon structure and is in turn supported by an underlying drive/sense layer. The micromachined POGA operated according to gyroscopic accelerometer principles, having better than milligram resolution and dynamic ranges in excess of 1 g (open loop) and approximately 12 mg (closed loop).

Published in:

Microelectromechanical Systems, Journal of  (Volume:12 ,  Issue: 1 )