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Low frequency mobility effects on MESFET device

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6 Author(s)

In a previous paper [2001] the observed differences between the static and dynamic IV characteristics of a MESFET were attributed to electric field and frequency effects. In this paper, such dependencies have been accounted for via the mobility figure. The results show a strong relationship between the mobility figure and both the frequency and the electric field (gate voltage).

Published in:

Communication Systems, 2002. ICCS 2002. The 8th International Conference on  (Volume:2 )

Date of Conference:

25-28 Nov. 2002