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A new lateral SiGe-base PNM Schottky collector bipolar transistor on SOI for non-saturating VLSI logic design

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2 Author(s)
Kumar, M.J. ; Dept. of Electr. Eng., Indian Inst. of Technol., Delhi, India ; Venkateshrao, D.

A novel bipolar transistor structure, namely, SiGe base lateral PNM Schottky collector bipolar transistor (SCBT) on silicon-on-insulator (SOI) substrate is explored using two-dimensional (2D) simulation. Based on a comparison with its equivalent PNP HBT, we demonstrate for the first time that the proposed SiGe base lateral PNM transistor exhibits a superior performance in terms of high current gain and cut-off frequency, reduced collector resistance, negligible reverse recovery time and suppressed Kirk effect.

Published in:

VLSI Design, 2003. Proceedings. 16th International Conference on

Date of Conference:

4-8 Jan. 2003