By Topic

Broad-band power amplifier with an improved doubly tapered periodic bandgap PBG structure for harmonic tuning

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Man-Long Her ; Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan ; Yi-Chyun Chiou ; Yu-Zhen Wang ; Yu-Lin Wang
more authors

We have designed and implemented three class A GaAs field-effect transistor (FET) power amplifiers. Two of these three cases have a 50 Ω microstrip line utilizing an improved doubly tapered and a singly tapered periodic bandgap (PBG) structure for harmonic tuning respectively, while the other has only a 50 Ω straight line. The doubly tapered PBG structure has more significantly improvement in output power and power added efficiency (PAE) than a singly tapered case and also has the ability to terminate the second and third harmonics. Measurement shows the improvement of output power and PAE with 0.5 dB and 4 % respectively by using a doubly PBG structure compared with a singly tapered one, and with 0.8 dB and 7 % improvement without utilizing a PBG structure.

Published in:

Communication Systems, 2002. ICCS 2002. The 8th International Conference on  (Volume:1 )

Date of Conference:

25-28 Nov. 2002