Referenced Items are not available for this document.
Two types (one-finger and four-finger) GaInP/GaAs collector-up tunnelling-collector heterojunction bipolar transistors (C-up TC-HBTs) with a backside emitter structure have been developed. The four-finger C-up TC-HBT demonstrated thermally stable operation up to 0.9 mW/μm2 without a ballast resistor. This performance shows that this C-up TC-HBT is promising for applications such as small monolithic-microwave ICs used in high-frequency high-power amplifiers.
Published in:
Electronics Letters
(Volume:39
,
Issue:
3
)
Date of Publication: 6 Feb 2003
- Page(s):
- 326 - 327
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 7530596
- Digital Object Identifier :
- 10.1049/el:20030213
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 February 2003
- Issue Date :
- 6 Feb 2003
- Sponsored by :
- Institution of Engineering and Technology
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