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Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm

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5 Author(s)
Cerutti, L. ; Centre d''Electronique et de Micro-optoelectronique de Montpellier, Univ. Montpellier II, France ; Garnache, A. ; Genty, F. ; Ouvrard, A.
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The operation of a diode-pumped AlGaAsSb/GaInAsSb type-I quantum-well vertical external cavity surface emitting laser (VECSEL) emitting near 2.1 μm is reported. The epitaxial structure, grown on GaSb by molecular beam epitaxy consists of a GaSb/AlAsSb Bragg reflector and a GaInAsSb/AlGaAsSb active region. A TEM00 low-divergence laser operation is demonstrated in quasi-CW (10 μs pulses, 10% duty cycle) from 250 up to 350 K. A threshold as low as 390 W/cm2 at 250 K combined with a T0 around 33 K has been measured.

Published in:

Electronics Letters  (Volume:39 ,  Issue: 3 )