By Topic

A dual bias-feed circuit design for SiGe HBT low-noise linear amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Taniguchi, Eiji ; Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kanagawa, Japan ; Ikushima, T. ; Itoh, K. ; Suematsu, N.

An SiGe HBT low-noise amplifier (LNA) with a novel diode/resistor dual base bias-feed circuit is described. The dual bias-feed circuit extends P1 dB without degradation of the noise figure (NF). In the small-signal region, a conventional resistor bias-feed circuit is a dominant base current source and, in the large-signal region, the diode turns on and the diode bias-feed circuit supplies the base current like a voltage source, which allows higher output power and linearity. In this paper, the operation principle of the dual bias-feed circuit is explained by using a virtual current source model, which indicates the increase of base current of the HBT in a large-signal region. The design method is also described for the idle current of the diode bias-feed circuit in a small-signal region from the points-of-view of NF and P1 dB. The effectiveness of the dual bias-feed circuit is evaluated by simulation and measurement. The fabricated 2-GHz-band dual bias-feed LNA has the P1 dB improvement of 5 dB and no degradation NF compared with the conventional resistor bias-feed LNA.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 2 )