By Topic

AlGaN/GaN HEMTs - operation in the K-band and above

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

13 Author(s)
Smorchkova, I.P. ; TRW Space & Electron. Group, Redondo Beach, CA, USA ; Wojtowicz, M. ; Sandhu, R. ; Tsai, R.
more authors

Reports on the power and microwave noise performance of AlGaN/GaN high electron-mobility transistors (HEMTs) at frequencies f>18 GHz (K- and Ka-bands). At 20 GHz, a record continuous-wave output power of 1.6 W has been achieved on an eight-finger 500-μm total gate-periphery device. At 29 GHz, a 120-μm gate-periphery device showed a pulsed output density of 1.6 W/mm with an associated gain of 6.7 dB and power-added efficiency of 26%. Minimum noise figure of 1.5 dB has been achieved on a 0.2 μm × 200 μm device at 26 GHz. The data demonstrate the viability of AlGaN/GaN HEMTs for high-frequency power and low-noise amplifier applications.

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 2 )