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High linearity and high efficiency of class-B power amplifiers in GaN HEMT technology

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11 Author(s)
V. Paidi ; Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA ; Shouxuan Xie ; R. Coffie ; B. Moran
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A 36-dBm high-linearity single-ended common-source class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with bandpass filtering have equivalent efficiency and linearity to push-pull configurations. The common-source class-B circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power-added efficiency (PAE) of 34%. Simulations of common-drain class-B designs predict a PAE of 54% with a superior IM3 suppression of more than 45 dBc over a wider range of bias due to the strong series-series negative feedback offered by the load resistance.

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IEEE Transactions on Microwave Theory and Techniques  (Volume:51 ,  Issue: 2 )