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Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications

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9 Author(s)
Khan, M.Asif ; Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA ; Simin, G. ; Yang, J. ; Jianping Zhang
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Describes the properties of novel III-N-based insulating gate heterostructure field-effect transistors (HFETs). For the gate isolation, these devices use either SiO2 layer (in metal-oxide-semiconductor HFET (MOSHFET) structures) or Si3N4 layer (in metal-insulator-semiconductor HFET structures). These insulating gate HFETs have the gate-leakage currents 4-6 orders of magnitude lower than HFETs, even at elevated temperatures up to 300°C. A double-heterostructure MOSHFET with SiO2 gate isolation exhibits current collapse-free performance with extremely low gate-leakage current. Insulating gate devices, including large periphery multigate structures, demonstrate high-power stable operation and might find applications in high-performance power amplifiers and microwave and high-power switches with operating temperatures up to 300°C or even higher.

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:51 ,  Issue: 2 )