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A 1 kW MOSFET half-bridge switching subassembly with gate drivers has been designed and fabricated, in integrated three-dimensional (3-D) form factor, using a planar integration technology, through building up dielectric/metallization thin-film interconnection directly on co-planar bare power chips embedded in a ceramic carrier. The 3-D geometrical layout was optimized through simulating electrical and thermal performance, with Maxwell Q3D and I-DEAS, respectively. The advantages of this module have been experimentally demonstrated by the electrical and thermal performance in the testbeds and IPEM-based DC/DC converter.
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE (Volume:1 )
Date of Conference: 9-13 Feb. 2003