Integrated packaging of a 1 kW switching module using planar interconnect on embedded power chips technology

A 1 kW MOSFET half-bridge switching subassembly with gate drivers has been designed and fabricated, in integrated three-dimensional (3-D) form factor, using a planar integration technology, through building up dielectric/metallization thin-film interconnection directly on co-planar bare power chips embedded in a ceramic carrier. The 3-D geometrical layout was optimized through simulating electrical and thermal performance, with Maxwell Q3D and I-DEAS, respectively. The advantages of this module have been experimentally demonstrated by the electrical and thermal performance in the testbeds and IPEM-based DC/DC converter.