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Integrated packaging of a 1 kW switching module using planar interconnect on embedded power chips technology

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8 Author(s)
Liang, Z.X. ; Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA ; Lee, F.C. ; Van Wyk, J.D. ; Boroyevich, D.
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A 1 kW MOSFET half-bridge switching subassembly with gate drivers has been designed and fabricated, in integrated three-dimensional (3-D) form factor, using a planar integration technology, through building up dielectric/metallization thin-film interconnection directly on co-planar bare power chips embedded in a ceramic carrier. The 3-D geometrical layout was optimized through simulating electrical and thermal performance, with Maxwell Q3D and I-DEAS, respectively. The advantages of this module have been experimentally demonstrated by the electrical and thermal performance in the testbeds and IPEM-based DC/DC converter.

Published in:

Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE  (Volume:1 )

Date of Conference:

9-13 Feb. 2003