Cart (Loading....) | Create Account
Close category search window
 

Performance of gamma irradiated p-channel 6H-SiC MOSFETs: high total dose

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kin Kiong Lee ; Japan Atomic Energy Res. Inst., Gunma, Japan ; Ohshima, T. ; Itoh, Hisayoshi

We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 108 rad (SiO2) by measuring the drain-source current (Ids) as a function of gate voltage (Vg) and drain-source voltage (Vds). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 106 rad (SiO2), while the n-channel devices are fully functional through 108 rad (SiO2). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:50 ,  Issue: 1 )

Date of Publication:

Feb 2003

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.