Skip to Main Content
We present the first observation of total dose effects of gamma-ray irradiation on enhancement mode 6H-SiC p-channel MOSFETs. The electrical characterization of these transistors was performed before and after irradiation up to a total dose of 108 rad (SiO2) by measuring the drain-source current (Ids) as a function of gate voltage (Vg) and drain-source voltage (Vds). These transistors were compared to 6H-SiC n-channel MOSFETs. The p-channel devices remain fully functional up to 106 rad (SiO2), while the n-channel devices are fully functional through 108 rad (SiO2). We found that the generation of radiation-induced interface states in the n-channel transistors is substantially lower than that of the p-channel devices.