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Imaging techniques to support low k1 optical lithography

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27 Author(s)
Conley, W. ; Adv. Products R&D Lab., Motorola Inc., Austin, TX, USA ; Nelson-Thomas, C. ; Brankner, K. ; Wei Wu
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Summary form only given. With half pitch k factors rapidly approaching sub 0.4, many lithography groups have looked seriously into alternative patterning and mask techniques. The semiconductor industry continues to explore numerous techniques for printing smaller geometry's with the hope of improving resolution and process window. There are a number of new and interesting mask/illumination techniques that have been published. These new mask techniques come with a variety of integration issues and manufacturing risks. The ITRS roadmap has become a living document with continuous change as imaging nodes change with improvements in imaging techniques or from delays in tool and process programs. ArF initially was planned for introduction at 0.18 /spl mu/m, however; real implementation may not begin until the 0.13 /spl mu/m or 0.100 /spl mu/m depending on the company. Moreover, very high NA ArF is now considered the up front candidate for the 0.065 /spl mu/m node. This presentation will discuss the various activities centered on imaging techniques to support the 0.065/spl mu/m node with high NA ArF. The authors will discuss experimental activities for 0.100 /spl mu/m and sub-0.100 /spl mu/m contacts along with 0.065mn imaging through a variety of mask and illumination techniques.

Published in:

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference:

6-8 Nov. 2002