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Application of electron beam cured spin-on glass to tri-level resist system for deep and vacuum ultraviolet lithography

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4 Author(s)
Y. Sato ; Semicond. Co., Toshiba Corp., Yokohama, Japan ; J. Abe ; H. Hayashi ; T. Shibata

A positive chemically amplified (CA) resist can cause footing because the acid in the CA resist diffuses into the spin-on glass (SOG) film due to its porous structure. Densifying the SOG film with electron beams (EB) is proposed in order to solve this problem. This method not only avoids footing but also increases the etch resistance of SOG for etching organic underlayers precisely.

Published in:

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference:

6-8 Nov. 2002