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The threshold resist model based on only aerial image is less time consuming and is sometimes more efficient than the full simulation model based on mathematically analyzing the whole complicated process of photolithography. But this model still contains a disadvantage that the prediction is limited in various situations. In this paper, the new threshold resist model to predict the Critical Dimension (CD) on the wafer is presented. This model has a functional form consisted of the aerial image intensity and its slope. More than 90% of prediction accuracy in various patterns with respect to pattern sizes is obtained by using the new model for 248 nm.