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Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several fluorinated norbornanes. Relatively poor transparencies are calculated in the stereoisomers of difluoronorbornane that are substituted at 1,4 or 7 positions. Furthermore the endo fluorination of norbornane is more effective than the exo fluorination. These results are very useful information for the development of resist materials for 157nm lithography.