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157nm resist material design for improvement of its transparency by using highly precise theoretical calculation

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2 Author(s)
Yamazaki, T. ; Semicond. Leading Edge Technol., Inc., Ibaraki, Japan ; Itani, T.

Vacuum ultraviolet (VUV) absorption spectra of resist materials for 157nm lithography were calculated theoretically by symmetry adapted cluster configuration interaction (SAC-CI) method. We have investigated several fluorinated norbornanes. Relatively poor transparencies are calculated in the stereoisomers of difluoronorbornane that are substituted at 1,4 or 7 positions. Furthermore the endo fluorination of norbornane is more effective than the exo fluorination. These results are very useful information for the development of resist materials for 157nm lithography.

Published in:

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference:

6-8 Nov. 2002