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Real time monitoring of initial thermal oxidation on Si[001] surface by synchrotron radiation photoemission spectroscopy

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3 Author(s)
Yoshigoe, A. ; Synchrotron Radiat. Res. Center, Japan Atomic Energy Res. Inst., Hyogo, Japan ; Moritani, K. ; Teraoka, Y.

We present the real time observation of oxidation states derived from Si-2p core-level shifts and the oxygen amounts evaluated from O- 1s by using synchrotron radiation photoemission spectroscopy, which was performed during the thermal oxidation utilizing O/sub 2/ gas on Si[001] surface over 855 K substrate temperature regions.

Published in:
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference: 6-8 Nov. 2002

Page(s):
210 - 211
Print ISBN:
4-89114-031-3
INSPEC Accession Number:
7671473
Conference Location :
Tokyo, Japan
Digital Object Identifier :
10.1109/IMNC.2002.1178618
Product Type:
Conference Publications

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