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Isotropic/anisotropic selective epitaxial growth of Si and SiGe on LOCOS patterned Si (100) substrate by cold wall type UHV-CVD

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6 Author(s)
Lim, S.-H. ; Sch. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea ; Song, S. ; Park, T. ; Lee, S.Y.
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In this study, we investigated isotropic/anisotropic selective area growth of the Si and SiGe epitaxial layers at various growth conditions and pattern sizes. Si and SiGe epitaxial layers were selectively grown on LOCOS patterned Si substrates by a cold wall-type ultrahigh vacuum chemical vapor deposition (UHV-CVD) system.

Published in:
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference: 6-8 Nov. 2002

Page(s):
74 - 75
Print ISBN:
4-89114-031-3
INSPEC Accession Number:
7671405
Digital Object Identifier :
10.1109/IMNC.2002.1178550
Product Type:
Conference Publications

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