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Transformation of dense contact holes in oxide etching

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6 Author(s)
Sakamori, S. ; ULSI Dev. Center, Mitsubishi Electr. Corp., Hyogo, Japan ; Fujiwara, N. ; Miyatake, H. ; Oikawa, K.
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For the semiconductor fabrication, the advanced photolithography technology of the high resolution by short wavelength, such as ArF, is studied. However, the photo resist used for present ArF lithography is deficient in the resistance for dry etching. In this study, it is investigated that the formation of the dense contact holes with the ArF resist mask.

Published in:

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference:

6-8 Nov. 2002