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Position-controlled carbon nanotube FETs fabricated by CVD synthesis using patterned metal catalyst

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8 Author(s)
Iwatsuki, S. ; Dept. of Quantum Eng., Nagoya Univ., Japan ; Ohno, Y. ; Kishimoto, S. ; Maezawa, K.
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Carbon nanotube (CNT) devices receive much attention from both physical and technological points of view because of the ideal one-dimensional structure, nano-size dimension, and ultra-low power dissipation. In order to realize CNT integrated circuits, it is important to fabricate CNT field-effect transistors (FETs) at designed positions. In this work, we fabricated position-controlled CNT FETs by chemical vapor deposition (CVD) synthesis using metal catalysts patterned on a silicon wafer. Good FET operations have been obtained.

Published in:

Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International

Date of Conference:

6-8 Nov. 2002

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