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Carbon nanotube (CNT) devices receive much attention from both physical and technological points of view because of the ideal one-dimensional structure, nano-size dimension, and ultra-low power dissipation. In order to realize CNT integrated circuits, it is important to fabricate CNT field-effect transistors (FETs) at designed positions. In this work, we fabricated position-controlled CNT FETs by chemical vapor deposition (CVD) synthesis using metal catalysts patterned on a silicon wafer. Good FET operations have been obtained.