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Electron beam (EB) nanolithography is essential for nanotechnology using nanopatterns, such as nanodevice fabrication. For establishing that, high accuracy of pattern size is necessary as well as high resolution. However, pattern-edge roughness, i.e. line-edge roughness (LER), causes fluctuation of pattern size and degrades dimension controllability. Many approaches to reducing LER have been reported, which are chiefly based on the improvement of resist materials. However, in addition to material approaches, an EB-writing-based approach is necessary in order to suppress LER further. In this report, we propose edge-enhancement writing as a new EB writing method for reducing LER. Simulation and experimental data clarify the effectiveness of this technique.