By Topic

Characterization of epitaxially grown YBa2Cu3O7-δ thin films produced using pulsed ion-beam evaporation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Suematsu, Hisayuki ; Extreme Energy-Density Res. Inst., Nagaoka Univ. of Technol., Japan ; Yoshida, G. ; Sorasit, S. ; Suzuki, Tsuneo
more authors

Epitaxially grown YBa2Cu3O7-δ (Y-123) thin films have been successfully deposited on single crystal SrTiO3 substrates by a pulsed ion-beam evaporation (IBE) method. A cation-stoichiometric Y-123 target was bombarded by protons with an energy of 1 MeV (peak) using a pulsed ion beam generator ('ETIGO-II'). The ablation plasma was deposited on SrTiO3 single crystal substrates. The thin films were heat-treated at 900°C for 2 h and 650°C for 5 h in flowing oxygen gas. The X-ray diffraction (XRD) pattern for an annealed thin film revealed that a single-phase, c-axis-oriented Y-123 thin film was obtained. Since a fourfold symmetry was observed in a [102] pole figure, the Y-123 thin film was concluded to be epitaxially grown on the SrTiO3 substrate. From high-speed photographs of the time evolution of the plasma, the instantaneous deposition rate of the film was estimated to be approximately 5 mm/s.

Published in:

Plasma Science, IEEE Transactions on  (Volume:30 ,  Issue: 5 )