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Suppression of boron TED by low temperature SPC anneal prior to dopant activation

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3 Author(s)
H. Takeuchi ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; P. Ranade ; T. -J. King

The application of a low temperature solid phase crystallization (SPC) anneal to nonpreamorphized junctions prior to a high-temperature dopant activation anneal is proposed. The SPC anneal eliminates implantation-induced defects which give rise to transient enhanced diffusion (TED), and thus reduce both vertical and lateral boron diffusion by 16 nm and 24 nm, respectively, in a conventional CMOS process thermal budget. Improved short channel effect (SCE) immunity was demonstrated with sub-100 nm FETs.

Published in:

IEEE Transactions on Electron Devices  (Volume:49 ,  Issue: 12 )