Referenced Items are not available for this document.
We report 1 nm tip radius, 1 μm gate-aperture silicon field emission arrays (FEAs) with turn-on voltage as low as 14 V. The low turn-on voltage is attributed to the small emitter tip radius, which was achieved by isotropic etching of silicon and low-temperature oxidation sharpening. Optimization of the oxidation sharpening process reduced the tip radius to less than 1 nm and was confirmed by transmission electron microscopy (TEM). The tip radius has a log-normal distribution with a peak at 0.75 nm, an expected value of 1.8 nm, and shape parameter of 0.74 nm. Current-voltage (I-V) characteristics of the field emission devices are in agreement with Fowler-Nordheim (FN) theory. The extracted tip radius using two-dimensional (2-D) numerical simulation showed good agreement with the TEM measurements.
Published in:
Electron Devices, IEEE Transactions on
(Volume:49
,
Issue:
12
)
Date of Publication: Dec 2002
- Page(s):
- 2333 - 2342
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7544574
- Digital Object Identifier :
- 10.1109/TED.2002.805230
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 February 2003
- Issue Date :
- Dec 2002
- Sponsored by :
- IEEE Electron Devices Society
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