Referenced Items are not available for this document.
Fabrication of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) at a low temperature is reported. 13.56 MHz-oxygen plasma at a 100 W, 130 Pa at 250°C for 5 min, and heat treatment at 260°C with 1.3×106-Pa-H2O vapor for 3 h were applied to reduction of the density of defect states in 25-nm-thick silicon films crystallized by irradiation of a 30 ns-pulsed XeCl excimer laser. Defect reduction was numerically analyzed. Those treatments resulted in a high carrier mobility of 830 cm2/Vs and a low threshold voltage of 1.5 V at a laser crystallization energy density of 285 mJ/cm2.
Published in:
Electron Devices, IEEE Transactions on
(Volume:49
,
Issue:
12
)
Date of Publication: Dec 2002
- Page(s):
- 2217 - 2221
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 7544559
- Digital Object Identifier :
- 10.1109/TED.2002.805234
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 19 February 2003
- Issue Date :
- Dec 2002
- Sponsored by :
- IEEE Electron Devices Society
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