Cart (Loading....) | Create Account
Close category search window

Polycrystalline silicon thin-film transistors fabricated by defect reduction methods

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Watakabe, H. ; Dept. of Electr. & Electron. Eng., Tokyo Univ. of Agric. & Technol., Japan ; Sameshima, T.

Fabrication of n-channel polycrystalline silicon thin-film transistors (poly-Si TFTs) at a low temperature is reported. 13.56 MHz-oxygen plasma at a 100 W, 130 Pa at 250°C for 5 min, and heat treatment at 260°C with 1.3×106-Pa-H2O vapor for 3 h were applied to reduction of the density of defect states in 25-nm-thick silicon films crystallized by irradiation of a 30 ns-pulsed XeCl excimer laser. Defect reduction was numerically analyzed. Those treatments resulted in a high carrier mobility of 830 cm2/Vs and a low threshold voltage of 1.5 V at a laser crystallization energy density of 285 mJ/cm2.

Published in:

Electron Devices, IEEE Transactions on  (Volume:49 ,  Issue: 12 )

Date of Publication:

Dec 2002

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.