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Hot-carrier-induced degradation for partially depleted SOI 0.25-0.1 μm CMOSFET with 2-nm thin gate oxide

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5 Author(s)
Wen-Kuan Yeh ; Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Taiwan ; Wen-Han Wang ; Yean-Kuen Fang ; Mao-Chieh Chen
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Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 μm with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) and the parasitic bipolar transistor effect (PBT) affect the hot-carrier-induced degradation of device characteristics. Without apparent FBE on pMOSFET, the worst hot-carrier stress condition of the 0.1 μm FB-SOI pMOSFET is similar to that of the 0.1 μm BC-SOI pMOSFET.

Published in:

IEEE Transactions on Electron Devices  (Volume:49 ,  Issue: 12 )